Alok Ranjan

Alok Ranjan

PhD Student, Engineering Product Development Pillar

Research Interests: 

  • Low Frequency Noise Spectroscopy in Dielectrics at Nanoscale
  • Resistive Switching Memory and Gate Oxide Reliability
  • Scanning Probe and Transmission Electron Microscopy Techniques

Pillar/Cluster: Engineering Product Development

  • A. Ranjan, F.M. Puglisi, N. Raghavan, S.J. O'Shea, K. Shubhakar, P. Pavan, A. Padovani, L. Larcher and K.L. Pey, “Random Telegraph Noise in 2D Hexagonal Boron Nitride Dielectric Films", Applied Physics Letters, Vol. 112, Issue 13, 133505, (2018).
  • A. Ranjan, N. Raghavan, S.J. O'Shea, S. Mei, M. Bosman, K. Shubhakar, and K.L. Pey, “Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films", Scientific Reports Vol. 08, 2854, (2018).
  • A. Ranjan, N. Raghavan, S.J. O'Shea, S. Mei, M. Bosman, K. Shubhakar, and K.L. Pey, “Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics", IEEE International Reliability Physics Symposium, Vol. 08, pp. 4A-1.1-4A-1.6, (2018).
  • R. Thamankar, F. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S.J. O'Shea and K.L. Pey, “Localized Characterization of Charge Transport and Random Telegraph Noise at the Nanoscale in HfO2 films Combining Scanning Tunneling Microscopy and Multi-Scale Simulations", Journal of Applied Physics, Vol. 122, Issue 02, pp. 4301.1-4301.7, (2017).
  • A. Ranjan, N. Raghavan, B. Liu, S.J. O'Shea, K. Shubhakar, C.S. Lai and K.L. Pey, “Nanoscale Investigations of Soft Breakdown Events in Few Layered Fluorinated Graphene", IEEE International Reliability Physics Symposium, 16916376, pp. 3C-5.1-3C-5.6, (2017). 
  • A. Ranjan, N. Raghavan, J. Molina, S.J. O'Shea, K. Shubhakar, and K.L. Pey, “Analysis of Quantum Conductance, Read Disturb and Switching Statistics in HfO2 RRAM using Conductive AFM", Microelectronics Reliability, Vol. 64, pp. 172-178, (2016).
  • A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, J. Molina, S.J. O'Shea, M. Bosman, and K.L. Pey, “CAFM Based Spectroscopy of Stress-induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State", IEEE International Reliability Physics Symposium, 16338036, pp. 7A-4-1-7A-4-7, (2016). 
  • A. Ranjan, K. Shubhakar, N. Raghavan, R. Thamankar, M. Bosman, S.J. O'Shea, and K.L. Pey, “Localized Random Telegraphic Noise Study in HfO2 Dielectric Stacks using Scanning Tunneling Microscopy - Analysis of Process and Stress-induced Traps", IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 15402109, pp. 458-462, (2015).